IDW '18

Special Topics of Interest on Oxide-Semiconductor TFT

date time session   room
Thu., Dec. 13 10:40-13:10 AMDp1 Oxide TFTs Event Hall
14:20-16:50 FMCp7 Manufacturing and Materials of Oxide TFTs
Fri., Dec. 14 10:40-11:50 AMD6 Oxide TFT: Device Reception Hall 1
13:10-14:35 AMD7 Oxide TFT: Stability and Fundamental (1)
14:50-16:10 AMD8 Oxide TFT: Stability and Fundamental (2)


AMD6 : Oxide TFT: Device

Fri., Dec. 14  10:40-11:50  Reception Hall 1

Chair: J. Kim (Tokyo Tech, Japan)
Co-Chair: K. Takatori (Huawei Techs. Japan, Japan)

AMD6-1 Invited Spreading Currents in Oxide TFTs
S. Lee, T.-W. Kim*, J. Jang (Kyung Hee Univ., Korea)
AMD6-2 Invited Top-Gate Oxide TFT Technologies 
for Advanced LCDs
I. Suzumura, Y. Yamaguchi, H. Kawanago (Japan Display, Japan)
AMD6-3 Oxide Semiconductor Based Vertical TFT for Ultra High-resolution Backplane Technology
K.-H. Lee, S. Lee, H.-I. Yeom, J.-B. Ko, C.-S. Hwang*, S.-H. K. Park (KAIST, Korea, *ETRI, Korea)

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AMD7 : Oxide TFT: Stability and Fundamental (1)

Fri., Dec. 14  13:10-14:35  Reception Hall 1

Chair: I. Suzumura (Japan Display, Japan)
Co-Chair: H. Kumomi (Tokyo Tech, Japan)

AMD7-1 Invited Electronic Structure and Defects 
in Amorphous Oxide Semiconductor:A Comprehensive Review
T. Kamiya, H. Kumomi, H. Hosono (Tokyo Tech, Japan)
AMD7-2 Enhancing Reliability of Amorphous In-Ga-Zn-O Thin Film Transistors by Nitrogen Doping
T. Sung, K. Park, J. H. Kim*, H.-W. Park**, P. Yun***, J. Noh***, S. W. Lee***, K.-S. Park***, S. Y. Yoon***, I. B. Kang***, K.-B. Chung**, H.-S. Kim*, J.-Y. Kwon (Yonsei Univ., Korea, *Chungnam Nat. Univ., Korea, **Dongguk Univ., Korea, ***LG Display, Korea)
AMD7-3 Simulation Study of Self-Heating Effects on Amorphous Oxide Semiconductor TFTs: Channel-Length Dependence
K. Abe, M. Fujinaga, T. Kuwagaki (Silvaco Japan, Japan)
AMD7-4 A 31-in. 4K2K AMOLED Display Using High Mobility and Reliability Top-Gate Self-Aligned IGZO TFTs with Cu Electrode
Z.-S. Liu*, **, Y.-J. Hsu*, **, S.-N. Zhao*, **, J.-S. Im*, **, Y.-C. Wu*, **, P.-Y. Lu*, ** (*Nat. Eng. Lab. For AMOLED Process Tech., China, **Shenzhen China Star Optoelect. Semiconductor Display Tech., China)

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AMD8 : Oxide TFT: Stability and Fundamental (2)

Fri., Dec. 14  14:50-16:10  Reception Hall 1

Chair: T. Kamiya (Tokyo Tech, Japan)
Co-Chair: S. Horita (JAIST, Japan)

AMD8-1 Invited Highly Stable High Mobility Oxide TFT for High Resolution AMOLED
J. B. Ko, S.-H. Lee, K. W. Park, J.-R. Lee*, W.-W. Park*, S.-H. K. Park (KAIST, Korea, *AVACO, Korea)
AMD8-2 Improvement of the Stability Under High Voltage and High Temperature Stress by Using Nitrogen Doped IGZO TFTs
I.-T. Cho, J. Noh, P. Yun, J. Jang, D. Lee, J.-H. Baeck, S.-W. Lee, K.-S. Park, S. Y. Yoon, J.-Y. Kwon*, I. Kang (LG Display, Korea, *Yonsei Univ., Korea)
AMD8-3 Development of Tunneling Contact a-IGZO TFT with Graphene Interlayer
L. Wang, L. Zhang*, X. Zhang*, Z. Zhu, H. Zhu (Visionox Tech., China, *Shenzhen Univ., China)
AMD8-4L High Stress Stability Imparted by Sn Addition Effect in High Mobility Amorphous IGZTO TFTs
M. Ochi, K. Nishiyama, Y. Teramae, H. Goto, T. Kugimiya (Kobe Steel, Japan)

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Poster AMDp1 : Oxide TFTs

Thu., Dec. 13  10:40-13:10  Event Hall

AMDp1-1 Organic Passivation Layer in Back-Channel-Etch Amorphous InGaZnO Thin Film Transistor with Color Filter on Array Structure for Large Size High Resolution Display Application
G. T. Li*'**, W. Wu**, F. Zhu**, J. J. Liu**, Y. H. Meng**, S. Li**, H. Zhou* (*Peking Univ., China, **Shenzhen China Star Optoelect. Tech., China)
AMDp1-2 Detecting Thickness of Accumulation Layer in a-IGZO Thin Film Transistors by Kelvin Probe Force Microscopy
X. Shi*'**, C. Lu*, D. Geng*, N. Lu*, J. Wang*, L. Li*, M. Liu* (*Chinese Ac. of Sci., China, **Univ. of Chinese Ac. of Sci., China)
AMDp1-3 Highly Stable Self-Aligned Coplanar Bulk Accumulation a-IGZO TFTs Under High Temperature Bias Stress
H. Kim, S. Lee, J. Lee, J. Jang (Kyung Hee Univ., Korea)
AMDp1-4 In-O-N Thin-film Transistors with Superior Stability
H.-D. Kim, H.-S. Kim (Chungnam Nat. Univ., Korea)
AMDp1-5 Comparator for Integrated Readout Circuits with a-IGZO TFTs
Y. Gong*'**, D. Geng*, Y. Su*, X. Shi*, C. Lu*, N. Lu*, L. Li*, M. Liu* (*Chinese Ac. of Sci., China, **Shandong Univ., China)
AMDp1-6 A Study on Degradation Mechanism of Flexible a-InGaZnO Thin Film Transistor Under Repetitive Bending Stress Using Simulation
K.-L. Han, H.-J. Jeong, B.-S. Kim, S. Oh, J.-S. Park (Hanyang Univ., Korea)
AMDp1-7 a-IGZO TFT Gate Driver Circuit for Suppressing Ripple Voltage without Pull-Down Unit
C. Y. Park, Y.-S. Kim (Sungkyunkwan Univ., Korea)
AMDp1-8 High Performance In-Ga-Zn-O Thin-Film Transistors via Microwave and Electron-Beam Radiation at Room Temperature
S.-C. Jang, H.-D. Kim, H.-S. Kim (Chungnam Nat. Univ., Korea)
AMDp1-9 Low-Temperature Processed IGTO Thin-Film Transistors with High Mobility by Reducing Deposition Pressure
H.-A. Kim, J. O. Kim, J. S. Hur, J. K. Jeong (Hanyang Univ., Korea)
AMDp1-10 IGZO TFT Gate Driver Circuit Capable of Compensating Threshold Voltage Shift for Pull-Down Unit
J. Oh, J.-H. Kim, K.-H. Lee*, E. S. Ha*, K. C. Park**, J.-H. Jeon***, Y.-S. Kim (Sungkyunkwan Univ., Korea, *Gyeonggi Sci. High School, Korea, **Konkuk Univ., Korea, ***Korea Aerospace Univ., Korea)
AMDp1-11 Double-Layered Indium-Zinc-Oxide Thin Film Transistors with an Addition of Hydrogen Peroxide
W. Jeon, B. Choi (Sungkyunkwan Univ., Korea)
AMDp1-12 Withdrawn
AMDp1-13L a-IGZO TFT Fabrication Using Advanced Imprint Lithography
H. Chae, S. Kim*, J. Cho, S. Cho (Sungkyunkwan Univ., Korea, *Samsung Inst. of Tech., Korea)
AMDp1-14L Solution-processed Metal Oxide Semiconductors Fabricated with Oxygen Radical Assisting Perchlorate Precursors through a New Reaction Route
P. Gao, L. Lan (South China Univ. of Tech., China)
AMDp1-15L Dynamic Bipolar Pulsed DC Sputtered IGZO for Mura-Free AMOLED Backplanes
Y.-C. P. Tsai, H.-W. Chang, J. Grillmayer, A. S. Bhoolokam*, J. B. Kim**, D. K. Yim**, M. Bender* (Applied Materials Taiwan, Taiwan, *Applied Materials, Germany, **Applied Materials, USA)
AMDp1-16L Development of Rare Metal Free Al/Ga-Sn-O/Al Cell Structure Switching Resistance Memory
S. Sugisaki, A. Kurasaki, R. Tanaka, T. Matsuda, M. Kimura (Ryukoku Univ., Japan)
AMDp1-17L Withdrawn

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Poster FMCp7 : Manufacturing and Materials of Oxide TFTs

Thu., Dec. 13  14:20-16:50  

FMCp7-1L Deposition of Insulator Film by Inductively Coupled Plasma CVD System with Low Impedance Antennas
T. Sakai, M. Fujiwara, D. Azuma, S. Nakata, Y. Setoguchi, Y. Andoh (Nissin Elec., Japan)
FMCp7-2L Deposition of Crystalline InGaZnO Film at Low Temperature Process by Inductively Coupled Plasma Sputtering System
D. Matsuo, R. Miyanaga*, T. Ikeda, S. Kisida, Y. Setoguchi, Y. Andoh, M. Fujii*, Y. Uraoka* (Nissin Elec., Japan, *NAIST, Japan)
FMCp7-3L ZnO:Ga Thin Film with Hydrogen and Nitrogen Post Annealing and Applications in Transparent RRAM
L. W. Wang, C.-C Lin, S.-Y. Chu (Nat. Cheng Kung Univ., Taiwan)

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